Resolved splitting of the free exciton luminescence band in silicon

The exciton ground state splitting in silicon is resolved in the TA phonon assisted free exciton luminescence spectrum. The splitting is found to be 0.31 (+0.03, −0.06) meV.

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Bibliographic Details
Published inSolid state communications Vol. 31; no. 1; pp. 5 - 7
Main Authors Parsons, R.R., Ziemelis, U.O., Rostworowski, J.A.
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.01.1979
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Summary:The exciton ground state splitting in silicon is resolved in the TA phonon assisted free exciton luminescence spectrum. The splitting is found to be 0.31 (+0.03, −0.06) meV.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(79)90522-2