Resolved splitting of the free exciton luminescence band in silicon
The exciton ground state splitting in silicon is resolved in the TA phonon assisted free exciton luminescence spectrum. The splitting is found to be 0.31 (+0.03, −0.06) meV.
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Published in | Solid state communications Vol. 31; no. 1; pp. 5 - 7 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.01.1979
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Online Access | Get full text |
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Summary: | The exciton ground state splitting in silicon is resolved in the TA phonon assisted free exciton luminescence spectrum. The splitting is found to be 0.31 (+0.03, −0.06) meV. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0038-1098 1879-2766 |
DOI: | 10.1016/0038-1098(79)90522-2 |