Magnetoresistance in sputtered Fe/Cr multilayer films

Polycrystalline Fe/Cr multilayer films were grown by sputter deposition. The as-grown films showed a mixture of ferromagnetic (FM) and antiferromagnetic (AF) coupling, with an unusually small magnetoresistance (MR) given the degree of AF coupling observed. Annealing for 1 h at 300°C increases the AF...

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Published inJournal of magnetism and magnetic materials Vol. 156; no. 1-3; pp. 65 - 66
Main Authors Ho, E.M., Petford-Long, A.K.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.1996
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Abstract Polycrystalline Fe/Cr multilayer films were grown by sputter deposition. The as-grown films showed a mixture of ferromagnetic (FM) and antiferromagnetic (AF) coupling, with an unusually small magnetoresistance (MR) given the degree of AF coupling observed. Annealing for 1 h at 300°C increases the AF component, and the MR increases accordingly. Annealing for one more hour, however, decreases the AF component again with a reduction of MR. Changes in microstructure observed on annealing suggest that interface roughness and pin holes in the film are key factors in determining the magnitude of the GMR effect.
AbstractList Polycrystalline Fe/Cr multilayer films were grown by sputter deposition. The as-grown films showed a mixture of ferromagnetic (FM) and antiferromagnetic (AF) coupling, with an unusually small magnetoresistance (MR) given the degree of AF coupling observed. Annealing for 1 h at 300°C increases the AF component, and the MR increases accordingly. Annealing for one more hour, however, decreases the AF component again with a reduction of MR. Changes in microstructure observed on annealing suggest that interface roughness and pin holes in the film are key factors in determining the magnitude of the GMR effect.
Polycrystalline Fe/Cr multilayer films were grown by sputter deposition. The as-grown films showed a mixture of ferromagnetic (FM) and antiferromagnetic (AF) coupling, with an unusually small magnetoresistance (MR) given the degree of AF coupling observed. Annealing for 1 h at 300 degree C increases the AF component, and the MR increases accordingly. Annealing for one more hour, however, decreases the AF component again with a reduction of MR. Changes in microstructure observed on annealing suggest that interface roughness and pin holes in the film are key factors in determining the magnitude of the GMR effect.
Author Ho, E.M.
Petford-Long, A.K.
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Cites_doi 10.1016/0304-8853(93)90559-K
10.1063/1.358207
10.1103/PhysRevLett.61.2472
10.1109/20.179533
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