Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy

• Published in: Applied surface science Vol. 177; no. 1; pp. 139 - 145
• Main Authors: Srnanek, R, Kinder, R, Sciana, B, Radziewicz, D, McPhail, D.S, Littlewood, S.D, Novotny, I
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.06.2001; Elsevier Science
• Subjects: Bevelled structure; Carrier concentration; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Doping and impurity implantation in iii-v and ii-vi semiconductors; Doping concentration; ECV; Exact sciences and technology; Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties; Physics; Raman spectroscopy; SIMS; Structure of solids and liquids; crystallography; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); ECV; Bevelled structure; SIMS; Carrier concentration; Doping concentration; Raman spectroscopy; Multilayers; Raman spectra; Gallium arsenides; Inorganic compounds; Semiconductor materials; Phonons; Binary compounds; Doping profiles; Experimental study; Concentration distribution
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(01)00227-6

A method for determination of doping concentration profiles of GaAs multilayer structures on a bevelled surface by Raman spectroscopy is presented. By scanning the laser beam along the bevel we obtained micro-Raman spectra in different depth positions in the structure. Calculated I TO/ I LO intensities determine the doping concentration in these points for values above 3×10 16 cm −3. The results are compared with electrochemical capacitance–voltage technique and secondary ion mass spectrometry. Some specific problems are discussed.