Model Semiconductor Surfaces: Arsenic Termination of the Ge(111), Si(111) and Si(100) Surfaces

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Bibliographic Details
Published inPhysica scripta Vol. 1987; pp. 7 - 12
Main Authors Bringans, R D, Uhrberg, R I G, Olmstead, M A, Bachrach, R Z, Northrup, J E
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.01.1987
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ISSN:1402-4896
0031-8949
1402-4896
DOI:10.1088/0031-8949/1987/T17/001