Trench process with HBr chemistry in ripe

The RIPE (Resonant Inductive Plasma Etcher) uses inductively coupled radio frequency power to generate a high density plasma at low pressure. Its capabilities in fluorine plasmas have already been demonstrated [1]. To satisfy all basic requirement for pattern transfer, Hbr chemistry for trench and p...

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Published inMicroelectronic engineering Vol. 13; no. 1-4; pp. 425 - 428
Main Authors Francou, Jean-Marc, Inard, Alain, Henry, Daniel
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.01.1991
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Summary:The RIPE (Resonant Inductive Plasma Etcher) uses inductively coupled radio frequency power to generate a high density plasma at low pressure. Its capabilities in fluorine plasmas have already been demonstrated [1]. To satisfy all basic requirement for pattern transfer, Hbr chemistry for trench and polysilicon etching has been tested in a pressure range1 to10 μbar. This work is related to the study of a trench process etch in HBr chemistry. Good profiles with high etch rate (0.7 μm/min) and high selectivity with respect to the SiO2 (12:1 to 100:1) are presented.
Bibliography:SourceType-Scholarly Journals-2
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ISSN:0167-9317
1873-5568
DOI:10.1016/0167-9317(91)90125-W