Trench process with HBr chemistry in ripe
The RIPE (Resonant Inductive Plasma Etcher) uses inductively coupled radio frequency power to generate a high density plasma at low pressure. Its capabilities in fluorine plasmas have already been demonstrated [1]. To satisfy all basic requirement for pattern transfer, Hbr chemistry for trench and p...
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Published in | Microelectronic engineering Vol. 13; no. 1-4; pp. 425 - 428 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.01.1991
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Online Access | Get full text |
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Summary: | The RIPE (Resonant Inductive Plasma Etcher) uses inductively coupled radio frequency power to generate a high density plasma at low pressure. Its capabilities in fluorine plasmas have already been demonstrated [1]. To satisfy all basic requirement for pattern transfer, Hbr chemistry for trench and polysilicon etching has been tested in a pressure range1 to10 μbar. This work is related to the study of a trench process etch in HBr chemistry. Good profiles with high etch rate (0.7 μm/min) and high selectivity with respect to the SiO2 (12:1 to 100:1) are presented. |
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Bibliography: | SourceType-Scholarly Journals-2 ObjectType-Feature-2 ObjectType-Conference Paper-1 content type line 23 SourceType-Conference Papers & Proceedings-1 ObjectType-Article-3 |
ISSN: | 0167-9317 1873-5568 |
DOI: | 10.1016/0167-9317(91)90125-W |