Schottky barrier height variation with metallurgical reactions in aluminum-titanium-gallium arsenide contacts

• Published in: Solid-state electronics Vol. 26; no. 6; pp. 559 - 564
• Main Authors: Wada, Yoshinori, Chino, Ken-Ichi
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.01.1983
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/0038-1101(83)90171-5

The behaviour of A1/Ti/ n-GaAs Schottky contacts under heat treatment at around 400°C have been studied for their application to GaAs MESFETs. Barrier heights have been determined using both I- V and C- V measurements as a function of heat treatment time. Reaction products due to heat treatment have been studied by X-ray diffraction and Auger electron spectroscopy. The A1/Ti/ n-GaAs Schottky contacts barrier height shows an “N”- shaped variation in response to heat treatment time. A marked reduction in barrier height follows a slight increase at the initial annealing stage. The barrier height then takes a minimum value. The slight increase in barrier height at the initial stage in the heat treatment is brought about by a Ti and GaAs reaction. The marked barrier height reduction is closely correlated to formation of the compound Al 3Ti. The increase in barrier height observed after the reduction can be explained in terms of GaAlAs formation at the metal-semiconductor interface. This seems to indicate that heat treatment is essential for application of Al/Ti n-GaAs Schottky contacts to practical devices.