Epitaxial Growth of GaP/InxGa1-xP (xIn ≥ 0.27) Virtual Substrate for Optoelectronic Applications

• Published in: Journal of Electrical Engineering Vol. 62; no. 2; pp. 93 - 98
• Main Authors: Hasenöhrl, Stanislav, Novák, Jozef, Vávra, Ivo, Šoltýs, Ján, Kučera, Michal, Šatka, Alexander
• Format: Journal Article
• Language: English
• Published: Bratislava Versita 01.03.2011; De Gruyter Poland
• Subjects: crystal structure; organometallic vapor phase epitaxy (OMVPE); semiconducting III-V materials
• ISSN: 1335-3632; 1339-309X
• DOI: 10.2478/v10187-011-0015-1

Compositionally graded epitaxial semiconductor buffer layers are prepared with the aim of using them as a virtual substrate for following growth of heterostructures with the lattice parameter different from that of the substrates available on market (GaAs, GaP, InP or InAs). In this paper we report on the preparation of the step graded InxGa1-xP buffer layers on the GaP substrate. The final InxGa1-xP composition xIn was chosen to be at least 0.27. At this composition the InxGa1-xP band-gap structure converts from the indirect to the direct one and the material of such composition is suitable for application in light emitting diode structures. Our task was to design a set of layers with graded composition (graded buffer layer) and to optimize growth parameters with the aim to prepare strain relaxed template of quality suitable for the subsequent epitaxial growth.