Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphide

• Published in: Journal of crystal growth Vol. 103; no. 1; pp. 226 - 233
• Main Authors: Favennec, P.N., L'Haridon, H., Coquillé, R., Salvi, M., Gauneau, M., Roizes, A., David, J.P., Krawczyk, S.K., Longères, J.Y.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.06.1990; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Exact sciences and technology; Impurities: concentration, distribution, and gradients; Physics; Structure of solids and liquids; crystallography
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/0022-0248(90)90193-O

Knowledge of the electrical activity of an implanted layer throughout wholly semi-insulating indium phosphide (InP) crystals provides a very useful indication of the crystal qualification for integrated circuit application. Different cartography techniques are studied to characterize various SI InP ingots: The mapping of sheet resistance and the scanning photoluminescence image are mainly performed. Standard iron doped SI InP crystals grown by LEC are used, as well as iron–gallium doped crystals and long annealed iron-doped crystals. Cartography techniques as well as different SI ingots are compared.