Surface states and surface oxide in GaN layers

Surface photovoltage spectroscopy, photoluminescence, Auger electron spectroscopy and x-ray photoelectron spectroscopy were used to correlate the chemical changes induced by HCl etching of GaN surface to changes in the yellow luminescence related states, through their manifestation in surface photov...

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Bibliographic Details
Published inJournal of applied physics Vol. 89; no. 1; pp. 390 - 395
Main Authors Shalish, I., Shapira, Yoram, Burstein, L., Salzman, J.
Format Journal Article
LanguageEnglish
Published 01.01.2001
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Summary:Surface photovoltage spectroscopy, photoluminescence, Auger electron spectroscopy and x-ray photoelectron spectroscopy were used to correlate the chemical changes induced by HCl etching of GaN surface to changes in the yellow luminescence related states, through their manifestation in surface photovoltage. The results show a correlation between a removal of the gallium oxide from the surface and a reduction of the yellow luminescence related transition in the surface photovoltage spectra. Based on this observation, it is suggested that the well known yellow luminescence is emitted from surface states associated with the gallium oxide that decorates the free surface and possibly also the substrate interface and internal grain boundaries.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.1330553