The effect of an interfacial layer on the blocking behaviour of mesa high-voltage power devices passivated by semi-insulating polycrystalline silicon films

The breakdown voltage of mesa high-voltage power diodes was studied in dependence on the thickness of a tunnelling oxide layer introduced between the silicon substrate and the semi-insulating polycrystalline silicon film (SIPOS). A further improvement of the breakdown voltage was observed by the dep...

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Bibliographic Details
Published inSolid-state electronics Vol. 34; no. 4; pp. 345 - 349
Main Authors Burte, Edmund P., Schulze, Günter H., Tursky, Werner
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.04.1991
Elsevier Science
Subjects
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thickness
Diode
Disruptive voltage
Tunnel effect
Polycrystal
Silicon Oxides
Power diode
Silicon
MESA diode
Thin film
Passivation
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Summary:The breakdown voltage of mesa high-voltage power diodes was studied in dependence on the thickness of a tunnelling oxide layer introduced between the silicon substrate and the semi-insulating polycrystalline silicon film (SIPOS). A further improvement of the breakdown voltage was observed by the deposition of additional dielectric layers. The observed values of the breakdown voltage could be related to the effective density of fixed charges at the SIPOS-tunnelling oxide-silicon interface determined by high frequency capacitance-voltage technique.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(91)90163-S