Preparation and anti-reflection performance of porous silicon/gold nanocomposite structures

In recent years, the development of battery technology has greatly improved the efficiency of solar energy utilization. Due to the limited band gap width of silicon, the energy provided by the photon with wavelength over 1107 nm is not enough to make the valence band electron transition, which great...

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Published inThe European physical journal. D, Atomic, molecular, and optical physics Vol. 77; no. 6
Main Authors Ge, Daohan, Fang, Zhiwei, Zhao, Chengxiang, Shi, Jiakang, Zhang, Liqiang
Format Journal Article
LanguageEnglish
Published Berlin/Heidelberg Springer Berlin Heidelberg 01.06.2023
Springer Nature B.V
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Summary:In recent years, the development of battery technology has greatly improved the efficiency of solar energy utilization. Due to the limited band gap width of silicon, the energy provided by the photon with wavelength over 1107 nm is not enough to make the valence band electron transition, which greatly limits the conversion and utilization of solar radiation energy in silicon-based solar cells. Based on the local surface plasmon resonance effect, the optical band gap of semiconductor materials can be widened. In this paper, porous silicon/gold (Au) nanocomposite structures were prepared by electrochemical anodic corrosion and added chloroauric acid solution in the corrosive liquids. The growth of gold nanostructures can be controlled by adjusting the concentration of chloroauric acid in the corrosive liquids. The spectral scanning in the wavelength range of 200–1400 nm shows that when the concentration of chloroauric acid is 0.01 mol/L, the best anti-reflection performance is obtained, and the average reflectance of porous silicon/gold nanocluster composite structure is reduced to 2.14%. This process provides a simple and economical method for the preparation of anti-reflection coating and has important research significance in the anti-reflection layer of solar cell devices. Graphical abstract
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ISSN:1434-6060
1434-6079
DOI:10.1140/epjd/s10053-023-00674-w