Effect of annealing time on the optical properties of AZTSe thin films

• Published in: Materials letters Vol. 201; pp. 105 - 108
• Main Authors: Henry, J., Mohanraj, K., Sivakumar, G.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.08.2017; Elsevier BV
• Subjects: Annealing; Atomic force microscopes; Atomic force microscopy; Atomic structure; Band gap; Materials science; Optical materials and properties Ag2ZnSnSe4; Optical properties; Physical vapour deposition; Semiconductor; Temperature; Thin films; Thin films; Optical materials and properties Ag2ZnSnSe4; Semiconductor; Physical vapour deposition
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2017.04.149

•Ag2ZnSnSe4 (AZTSe) thin films have prepared by thermal evaporation method.•The annealed film shows tetragonal AZTSe structure.•AFM images shows voids for 6h annealed films.•DRS spectrum of shows good optical absorption in the entire visible range.•Band gap is found in the range of 1.37–1.71eV. Ag2ZnSnSe4 (AZTSe) thin films have prepared by thermal evaporation method and annealed at 300°C for different annealing times (2h, 4h and 6h) in air atmosphere. The annealed films show tetragonal AZTSe structure and the crystallite size decreases with increase in annealing temperature. Atomic force microscope (AFM) images shows voids for 6h annealed films and particle size increases with annealing time. Diffuse reflection spectroscopy (DRS) spectrum shows good optical absorption in the entire visible range for all the films and the band gap is found in the range of 1.37–1.71eV.