Changes in tunnel barrier parameters on incorporation of reactive species

Simultaneous monitoring of both capacitance and resistance during the exposure of tunnel junctions to water vapour is shown to be a powerful technique for studying the infusion doping process. Results depend critically on the metal used for the top electrode and show capacitance increases on exposur...

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Bibliographic Details
Published inThin solid films Vol. 198; no. 1; pp. 85 - 92
Main Authors Bellingham, J.R., Adkins, C.J., Phillips, W.A.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 20.03.1991
Elsevier Science
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
Electrical conductivity
Vapor phase
Doping
Tunnel effect
Capacitance
Tunnel junction
Experimental study
Water vapor
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Summary:Simultaneous monitoring of both capacitance and resistance during the exposure of tunnel junctions to water vapour is shown to be a powerful technique for studying the infusion doping process. Results depend critically on the metal used for the top electrode and show capacitance increases on exposure to water vapour. Observed changes in both capacitance and resistance can be explained in terms of current ideas about tunnel junction structure.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(91)90327-T