High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure

• Published in: Applied physics express Vol. 8; no. 10; pp. 101001 - 101004
• Main Authors: Medjdoub, Farid, Kabouche, Riad, Linge, Astrid, Grimbert, Bertrand, Zegaoui, Malek, Gamarra, Piero, Lacam, Cédric, Tordjman, Maurice, di Forte-Poisson, Marie-Antoinette
• Format: Journal Article
• Language: English
• Published: The Japan Society of Applied Physics 01.10.2015; IOPScience - Japan Society of Applied Physics
• Subjects: Engineering Sciences
• ISSN: 1882-0778; 1882-0786; 1882-0786
• DOI: 10.7567/APEX.8.101001

We report on the improvement of the electron transport properties of the two-dimensional electron gas (2DEG) confined at a nearly lattice-matched quaternary barrier InAlGaN/AlN/GaN heterostructure using a sub-10 nm ultrathin barrier. Electron mobilities of 1800 (RT) and 6800 cm2 V−1 s−1 (77 K) are achieved while delivering a high electron density of 1.9 × 1013 cm−2, resulting in extremely low sheet resistances of 191 Ω/ at RT and below 50 Ω/ at 77 K. These 2DEG properties exceed the best ones ever reported for III-N structures. The excellent current and power gain cut-off frequencies of 60 and 190 GHz at VDS = 15 V obtained using 0.25 µm technology reflect the outstanding 2DEG properties.