Local surface conductivity mapping of single-layer graphene subject to low energy argon bombardment: Energy loss mechanism and defect induction efficiency

• Published in: Materials letters Vol. 256; p. 126638
• Main Authors: Basu, Tanmoy, Blaskovic, Milan, Tripathy, Sudhiranjan, Tian, Feng, Singh, Ranveer, Som, Tapobrata, Garaj, Slaven, Anton van Kan, Jeroen
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.2019; Elsevier BV
• Subjects: Argon; Argon ions; Atomic force microscopy; Defects; Energy; Energy dissipation; Fluence; Graphene; Ion beams; Ion bombardment; Ion irradiation; Mapping; Materials science; Nuclear energy; Nuclear engineering; Nuclear reactors; Power efficiency; Graphene; Ion irradiation; Defects
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2019.126638

•Low energy Ar+ irradiation of graphene.•Calculation of defect induction efficiency in graphene.•Role of Sn and Se in defect formation.•Role of sputtering.•Conductive atomic force microscopy study.•Change in surface conductivity after ion irradiation. An ion-beam exposure can be applied to form defects in supported graphene which can be tuned with energies and fluence. However, recent results show that nuclear energy loss process is the dominant mechanism in defect formation. In the present work, it is shown that in low energy regime (1–10 keV Ar+ ions), both nuclear and electronic energy losses play an important role in forming different types of defects. Here we show a linear relation between defect induction efficiency and energy loss. Conductive atomic force microscopy shows a significant reduction in the current through supported graphene after ion beam exposure.