Light absorption properties of mesoporous barium hexaferrite, BaFe12O19
•BaFe12O19 is a cheap magnetic semiconductor with diverse technological applications.•BaFe12O19 particles were synthetized by ceramic and co-precipitation method.•Band gap was 1.86 and 1.82 eV for the co-precipitation and ceramic method.•The electrons of barium hexaferrite can be excited by visible...
Saved in:
Published in | Materials letters Vol. 252; pp. 239 - 243 |
---|---|
Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.10.2019
Elsevier BV |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | •BaFe12O19 is a cheap magnetic semiconductor with diverse technological applications.•BaFe12O19 particles were synthetized by ceramic and co-precipitation method.•Band gap was 1.86 and 1.82 eV for the co-precipitation and ceramic method.•The electrons of barium hexaferrite can be excited by visible light irradiation.•Due to its chemical stability and magnetic properties can be used as photocatalyst.
Light absorption properties are one of the most important characteristics of semiconductor materials, since it is related to particle size, electric resistance, powder density, and dielectric constant. Barium hexaferrite (BaFe12O19) particles were synthesized by ceramic and chemical co-precipitation method. Light absorption properties were studied in relation to the particle size, morphology, and surface porosity. The band gap was calculated by the Kubelka-Munk method from the obtained experimental absorption spectrum. Band gap energies of 1.82 and 1.86 eV were estimated for the particles synthesized by the ceramic method and for the co-precipitation method respectively. The results show that both synthesized BaFe12O19 samples can be effectively excited with visible light irradiation. In addition to this, due to its other good characteristics such as its magnetic properties, high resistance to corrosion, and chemical stability, make the barium hexaferrite an excellent material for diverse technological applications. |
---|---|
ISSN: | 0167-577X 1873-4979 |
DOI: | 10.1016/j.matlet.2019.05.137 |