EDEPR of impurity centers embedded in silicon microcavities

We present the first findings of the new electrically-detected EPR (EDEPR) technique which reveal different shallow and deep centers without using the external cavity as well as the hf source and recorder, with measuring the only magnetoresistance of the Si-QW confined by the superconductor δ-barrie...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 404; no. 23-24; pp. 5140 - 5143
Main Authors Bagraev, N.T., Gehlhoff, W., Gets, D.S., Klyachkin, L.E., Kudryavtsev, A.A., Malyarenko, A.M., Mashkov, V.A., Romanov, V.V.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.12.2009
Subjects
Bound exciton
EPR
Quantum well
Silicon microcavity
Trigonal centers
Quantum well
Bound exciton
Silicon microcavity
EPR
Trigonal centers
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Summary:We present the first findings of the new electrically-detected EPR (EDEPR) technique which reveal different shallow and deep centers without using the external cavity as well as the hf source and recorder, with measuring the only magnetoresistance of the Si-QW confined by the superconductor δ-barriers.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2009.08.247