Properties of PbTe/PbSnTe multiple QWs

Optical transmission, photosensitivity and some electrical characteristics of narrow-gap PbTe/Pb 1−xSn xTe (x ⋟ 0.2) MQWs were investigated. With the thickness of the wells a = 100 −900 å the electrical characteristics show quasi-2D K such MQWs on BaF 2 substrates are type I structures. The main con...

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Bibliographic Details
Published inSuperlattices and microstructures Vol. 9; no. 4; pp. 483 - 486
Main Authors Sizov, F.F., Tetyorkin, V.V., Gumenjuk-Sichevskaya, J.V., Apatskaya, M.V.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 1991
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
Band structure
Semiconductor materials
Electrical properties
Lead Tellurides
Infrared absorption
Multiple quantum well
Electronic transition
Tin Lead Tellurides Mixed
Experimental study
Inorganic compound
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Summary:Optical transmission, photosensitivity and some electrical characteristics of narrow-gap PbTe/Pb 1−xSn xTe (x ⋟ 0.2) MQWs were investigated. With the thickness of the wells a = 100 −900 å the electrical characteristics show quasi-2D K such MQWs on BaF 2 substrates are type I structures. The main contribution to the optical absorption coefficient presents electron transitions between the states in oblique valleys.
ISSN:0749-6036
1096-3677
DOI:10.1016/0749-6036(91)90175-Q