Novel heterojunction bipolar transistor architectures for the practical implementation of high-efficiency three-terminal solar cells
Practical device architectures are proposed here for the implementation of three-terminal heterojunction bipolar transistor solar cells (3T-HBTSCs). These photovoltaic devices, which have a potential efficiency similar to that of multijunction cells, exhibit reduced spectral sensitivity compared wit...
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Published in | Solar energy materials and solar cells Vol. 194; pp. 54 - 61 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.06.2019
Elsevier BV |
Subjects | |
Online Access | Get full text |
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Summary: | Practical device architectures are proposed here for the implementation of three-terminal heterojunction bipolar transistor solar cells (3T-HBTSCs). These photovoltaic devices, which have a potential efficiency similar to that of multijunction cells, exhibit reduced spectral sensitivity compared with monolithically and series-connected tandem solar cells. In addition, the simplified n-p-n (or p-n-p) structure does not require the use of tunnel junctions. In this framework, four architectures are proposed and discussed in this paper: 1) one in which the top cell is based on silicon and the bottom cell is based on a heterojunction between silicon and III-V nanomaterials; 2) one in which the top cell is made of amorphous silicon and the bottom cell is made of an amorphous silicon-silicon heterojunction; 3) one based on the use of III-V semiconductors aimed at space applications; and 4) one in which the top cell is based on a perovskite material and the bottom cell is made of a perovskite-silicon heterostructure.
•Novel three-terminal solar cells presented resembling a heterojunction BJT.•Practical heterojunction bipolar transistor solar cell architectures designed.•Si, a-Si: H, III-Vs, nanomaterials and perovskites explored for their implementation.•Potential efficiencies similar to those of multijunction solar cells.•Simple structures, with reduced spectral sensitivity and increased robustness. |
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ISSN: | 0927-0248 1879-3398 |
DOI: | 10.1016/j.solmat.2019.01.027 |