Hydrogen ion drift in Sb-doped Ge Schottky diodes

Ion drift of negatively charged hydrogen was detected in Sb-doped Ge. The SbH pairs exhibit a dissociation energy of 1.36(6)eV. The dissociation energy of the dopant–ion pairs is determined by reverse bias annealing (RBA). Two different experimental techniques were applied: (1) CV-profiling of the p...

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Published inPhysica. B, Condensed matter Vol. 404; no. 23-24; pp. 5099 - 5101
Main Authors Bollmann, J., Endler, R., Dung, Vo Tien, Weber, J.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 15.12.2009
Subjects
Dissociation
Germanium
Hydrogen
Passivation
Germanium
Dissociation
Hydrogen
Passivation
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Summary:Ion drift of negatively charged hydrogen was detected in Sb-doped Ge. The SbH pairs exhibit a dissociation energy of 1.36(6)eV. The dissociation energy of the dopant–ion pairs is determined by reverse bias annealing (RBA). Two different experimental techniques were applied: (1) CV-profiling of the passivated dopant profile after each RBA step, (2) detection of the capacitance time response of a reversed biased Schottky diode during RBA. The advantage of the later technique is the simplicity of the measurement. This technique also allows measurements on a shorter timescale, which is advantageous in n-type Ge, where strong retrapping of the dissociated hydrogen occurs.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2009.08.221