Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates

• Published in: Physica. B, Condensed matter Vol. 404; no. 23-24; pp. 4889 - 4891
• Main Authors: PŁaczek-Popko, E., Trzmiel, J., Zielony, E., Grzanka, S., Czernecki, R., Suski, T.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.12.2009
• Subjects: DLTS; GaN; p–n GaN diodes; GaN; p–n GaN diodes; DLTS
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2009.08.237

In this study, we present the results of investigation on p–n GaN diodes by means of deep level transient spectroscopy (DLTS) within the temperature range of 77–350K. Si-doped GaN layers were grown by metal-organic vapor-phase epitaxy technique (MOVPE) on the free-standing GaN substrates. Subsequently Mg-doped GaN layers were grown. To perform DLTS measurements Ni/Au contacts to p-type material and Ti/Au contacts to n-type material were processed. DLTS signal spectra revealed the presence of two majority traps of activation energies obtained from Arrhenius plots equal to E1=0.22eV and E2=0.65eV. In present work we show that the trap E1 is linked with the extended defects whereas the trap E2 is the point defect related. Its capture cross section is thermally activated with energy barrier for capture equal to 0.2eV.