Iodine doping in amorphous carbon thin-films for optoelectronic devices
We report the effects of iodine doping on the optical and structural properties of amorphous carbon thin-films grown on silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (CVD) at low temperature (<100 °C). For film deposition, we used Ar and CH 4 as plasma s...
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Published in | Physica. B, Condensed matter Vol. 376; pp. 316 - 319 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
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01.04.2006
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Abstract | We report the effects of iodine doping on the optical and structural properties of amorphous carbon thin-films grown on silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (CVD) at low temperature (<100
°C). For film deposition, we used Ar and CH
4 as plasma source gases. The films were characterized by UV/Vis/NIR spectroscopy, X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy measurements. The optical band gap of the films decreased from 3 to 0.8
eV corresponding to non-doping to iodine doping conditions. The XPS results confirm the successful doping of iodine in the films. The Raman results show that iodine doping induced more graphitization in the films. |
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AbstractList | We report the effects of iodine doping on the optical and structural properties of amorphous carbon thin-films grown on silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (CVD) at low temperature ( < 100 deg C). For film deposition, we used Ar and CH4 as plasma source gases. The films were characterized by UV/Vis/NIR spectroscopy, X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy measurements. The optical band gap of the films decreased from 3 to 0.8eV corresponding to non-doping to iodine doping conditions. The XPS results confirm the successful doping of iodine in the films. The Raman results show that iodine doping induced more graphitization in the films. We report the effects of iodine doping on the optical and structural properties of amorphous carbon thin-films grown on silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (CVD) at low temperature (<100 °C). For film deposition, we used Ar and CH 4 as plasma source gases. The films were characterized by UV/Vis/NIR spectroscopy, X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy measurements. The optical band gap of the films decreased from 3 to 0.8 eV corresponding to non-doping to iodine doping conditions. The XPS results confirm the successful doping of iodine in the films. The Raman results show that iodine doping induced more graphitization in the films. |
Author | Soga, Tetsuo Adhikari, Sudip Adhikary, Sunil Uchida, Hideo Umeno, Masayoshi Omer, Ashraf M.M. Rusop, Mohamad |
Author_xml | – sequence: 1 givenname: Ashraf M.M. surname: Omer fullname: Omer, Ashraf M.M. email: e03801@isc.chubu.ac.jp organization: Department of Electrical and Electronic Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan – sequence: 2 givenname: Sudip surname: Adhikari fullname: Adhikari, Sudip organization: Department of Electrical and Electronic Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan – sequence: 3 givenname: Sunil surname: Adhikary fullname: Adhikary, Sunil organization: Department of Electronics and Information Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan – sequence: 4 givenname: Mohamad surname: Rusop fullname: Rusop, Mohamad organization: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 464-8501, Japan – sequence: 5 givenname: Hideo surname: Uchida fullname: Uchida, Hideo organization: Department of Electronics and Information Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan – sequence: 6 givenname: Masayoshi surname: Umeno fullname: Umeno, Masayoshi organization: Department of Electronics and Information Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501, Japan – sequence: 7 givenname: Tetsuo surname: Soga fullname: Soga, Tetsuo organization: Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 464-8501, Japan |
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Title | Iodine doping in amorphous carbon thin-films for optoelectronic devices |
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