Iodine doping in amorphous carbon thin-films for optoelectronic devices

We report the effects of iodine doping on the optical and structural properties of amorphous carbon thin-films grown on silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (CVD) at low temperature (<100 °C). For film deposition, we used Ar and CH 4 as plasma s...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 376; pp. 316 - 319
Main Authors Omer, Ashraf M.M., Adhikari, Sudip, Adhikary, Sunil, Rusop, Mohamad, Uchida, Hideo, Umeno, Masayoshi, Soga, Tetsuo
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.04.2006
Subjects
Amorphous carbon
Iodine doping
Microwave surface wave plasma CVD
Optoelectronic properties
Iodine doping
Amorphous carbon
Optoelectronic properties
Microwave surface wave plasma CVD
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Summary:We report the effects of iodine doping on the optical and structural properties of amorphous carbon thin-films grown on silicon and quartz substrates by microwave surface wave plasma chemical vapor deposition (CVD) at low temperature (<100 °C). For film deposition, we used Ar and CH 4 as plasma source gases. The films were characterized by UV/Vis/NIR spectroscopy, X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy measurements. The optical band gap of the films decreased from 3 to 0.8 eV corresponding to non-doping to iodine doping conditions. The XPS results confirm the successful doping of iodine in the films. The Raman results show that iodine doping induced more graphitization in the films.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2005.12.081