Femtosecond photoluminescence up-conversion spectroscopy in Cu doped CdS quantum dots

[Display omitted] •Single source cluster approach used to synthesize Cu doped CdS (Cu:CdS) QDs.•Very high photoluminescence (PL) dopant emission observed in Cu:CdS QDs.•First-time femtosecond PL up-conversion technique used to study the hole dynamics of Cu:CdS QDs.•This simple system can boost the p...

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Bibliographic Details
Published inMaterials letters Vol. 297; p. 129925
Main Authors Yadav, Amar Nath, Kumar, Pramod, Singh, Kedar
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.08.2021
Elsevier BV
Subjects
Augers
Cadmium sulfide
Copper
Current carriers
Luminescence
Materials science
Nanoparticles
Photoluminescence
Quantum dots
Semiconductors
Spectroscopy
Spectrum analysis
Upconversion
Nanoparticles
Spectroscopy
Semiconductors
Luminescence
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Summary:[Display omitted] •Single source cluster approach used to synthesize Cu doped CdS (Cu:CdS) QDs.•Very high photoluminescence (PL) dopant emission observed in Cu:CdS QDs.•First-time femtosecond PL up-conversion technique used to study the hole dynamics of Cu:CdS QDs.•This simple system can boost the power conversion efficiency of solar cell device. Herein, femtosecond photoluminescence up-conversion (u-PL) spectroscopy has been carried out to elucidate charge carrier relaxation dynamics of the hole in 2 nm copper doped CdS (Cu:CdS) QDs. The hole capturing time at the Cu defect state from the valance band edge of the CdS host appeared significantly faster (437 fs) compared to pure CdS QDs (670 fs). This faster hole capturing in Cu:CdS QDs can compete with Auger-type cooling, and consequently, we can expect slower electron cooling in this system.
ISSN:0167-577X
1873-4979
DOI:10.1016/j.matlet.2021.129925