Communication-Bottom-Up TSV Filling Using Sulfonated Diallyl Dimethyl Ammonium Bromide Copolymer as a Leveler

A new leveler, sulfonated diallyl dimethyl ammonium bromide copolymer, exhibits the void-free through silicon via (TSV) bottom-up filling with 5 minutes. The leveler has been characterized by CVS measurements with different concentrations at different RDE rotation speeds. The results show that SDDAB...

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Bibliographic Details
Published inJournal of the Electrochemical Society Vol. 166; no. 12; pp. D505 - D507
Main Authors Dinh, Van Quy, Kondo, Kazuo, Hoang, Van Ha, Hirato, Tetsuji
Format Journal Article
LanguageEnglish
Published The Electrochemical Society 2019
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Summary:A new leveler, sulfonated diallyl dimethyl ammonium bromide copolymer, exhibits the void-free through silicon via (TSV) bottom-up filling with 5 minutes. The leveler has been characterized by CVS measurements with different concentrations at different RDE rotation speeds. The results show that SDDABC assisted the formation of a strong inhibition layer on copper surface when 16 ppm concentration has been added. Furthermore, bottom-up TSV filling with nearly no deposit on TSV sidewall is achieved with 16 ppm of SDDABC. Also, the filling time of 20 × 45 μm TSV is only 5 minutes.
Bibliography:1021912JES
ISSN:0013-4651
1945-7111
DOI:10.1149/2.1021912jes