Reduction of spectral noise density in p-i-n-HEMT lightwave receivers

The spectral noise density of a lightwave receiver is computed from known physical parameters of the photodiode and the high-electron-mobility transistor (HEMT). Low noise is achieved for an appropriate choice of device parameters. The results are applied to circuits built with readily available com...

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Bibliographic Details
Published inJournal of lightwave technology Vol. 9; no. 7; pp. 887 - 892
Main Author Schneider, M.V.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.07.1991
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Capacitance
Circuit noise
Circuit properties
Electric, optical and optoelectronic circuits
Electronics
Electrons
Equivalent circuits
Exact sciences and technology
HEMTs
Integrated optoelectronics. Optoelectronic circuits
MODFETs
Noise reduction
Optical and optoelectronic circuits
Photodiodes
Physics computing
Temperature
Noise spectrum
High electron mobility transistor
Computer simulation
Noise
Theoretical study
Optical receiver
Photodiode
Spectral density
Performance
Calculating method
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Summary:The spectral noise density of a lightwave receiver is computed from known physical parameters of the photodiode and the high-electron-mobility transistor (HEMT). Low noise is achieved for an appropriate choice of device parameters. The results are applied to circuits built with readily available commercial HEMTs and p-i-n photodiodes. They also predict the superior noise performance of cooled receivers which cannot be readily derived from previous work.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0733-8724
1558-2213
DOI:10.1109/50.85790