Band structure of amorphous zinc tin oxide thin films deposited by atomic layer deposition

[Display omitted] Recently, zinc tin oxide (ZTO) has attracted attention as an alternative buffer layer to replace CdS for photovoltaic cells. ZTO thin films were grown by atomic layer deposition from diethylzinc, tetrakis(dimethylamido)tin, and water. Compositional, structural and optical propertie...

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Bibliographic Details
Published inJournal of industrial and engineering chemistry (Seoul, Korea) Vol. 58; pp. 328 - 333
Main Authors Lee, Sunyoung, Kim, Sungjoon, Shin, Seokhee, Jin, Zhenyu, Min, Yo-Sep
Format Journal Article
LanguageEnglish
Published Elsevier B.V 25.02.2018
한국공업화학회
Subjects
Atomic layer deposition
Band structure
Buffer layer
Work function
Zinc tin oxide
화학공학
Buffer layer
Band structure
Work function
Zinc tin oxide
Atomic layer deposition
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Summary:[Display omitted] Recently, zinc tin oxide (ZTO) has attracted attention as an alternative buffer layer to replace CdS for photovoltaic cells. ZTO thin films were grown by atomic layer deposition from diethylzinc, tetrakis(dimethylamido)tin, and water. Compositional, structural and optical properties were characterized to construct band diagram of the ZTO films depending on Sn content. The ZTO films exhibit optical bandgaps of 2.95–3.07eV which are wider than that of CdS. Furthermore, their work function is also observed to vary in a wide range of 4.32–5.16eV. It is attributed to incorporation of Sn into ZTO which strongly influences formation of oxygen vacancies.
ISSN:1226-086X
1876-794X
DOI:10.1016/j.jiec.2017.09.045