Multistate resistive switching characteristics of ZnO nanoparticles embedded polyvinylphenol device

[Display omitted] Multistate resistive switching device was demonstrated with organic/inorganic nanocomposite layer of polyvinylphenol (PVP) embedded with zinc oxide nanoparticles (ZnO NPs). Both cap (ITO/ZnO NPs+PVP/Al) and crossbar (Pt/ZnO NPs+PVP/Al) device formats were examined, respectively. Ex...

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Bibliographic Details
Published inJournal of industrial and engineering chemistry (Seoul, Korea) Vol. 64; pp. 85 - 89
Main Authors Jung, Jihee, Kwon, Dahye, Jung, Hunsang, Lee, Kyungmin, Yoon, Tae-Sik, Kang, Chi Jung, Lee, Hyun Ho
Format Journal Article
LanguageEnglish
Published Elsevier B.V 25.08.2018
한국공업화학회
Subjects
Depression
Multistate memory
Polyvinylphenol
Potentiation
ZnO nanoparticle
화학공학
Potentiation
Depression
Polyvinylphenol
ZnO nanoparticle
Multistate memory
Online AccessGet full text
ISSN1226-086X
1876-794X
DOI10.1016/j.jiec.2018.02.026

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Summary:[Display omitted] Multistate resistive switching device was demonstrated with organic/inorganic nanocomposite layer of polyvinylphenol (PVP) embedded with zinc oxide nanoparticles (ZnO NPs). Both cap (ITO/ZnO NPs+PVP/Al) and crossbar (Pt/ZnO NPs+PVP/Al) device formats were examined, respectively. Extending range of voltage sweep could show adaptive memory effect, which could roughly emulate analog resistive switching device. In addition, potentiation and depression behaviors were also examined with 50 time consecutive pulsed bias (+2.0V and −2.0V respectively) having 10ms width measured at read voltage of −0.2V. A new possibility of analog resistive switching can be further pursued with the ZnO NPs+PVP nanocomposite.
ISSN:1226-086X
1876-794X
DOI:10.1016/j.jiec.2018.02.026