SiGe clock and data recovery IC with linear-type PLL for 10-Gb/s SONET application
An integrated 10 Gb/s clock and data recovery (CDR) circuit is fabricated using SiGe technology, It consists of a linear-type phase-locked loop (PLL) based on a single-edge version of the Hogge phase detector, a LC-tank voltage-controlled oscillator (VCO) and a tri-state charge pump. A PLL equivalen...
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Published in | IEEE journal of solid-state circuits Vol. 35; no. 9; pp. 1353 - 1359 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.09.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | An integrated 10 Gb/s clock and data recovery (CDR) circuit is fabricated using SiGe technology, It consists of a linear-type phase-locked loop (PLL) based on a single-edge version of the Hogge phase detector, a LC-tank voltage-controlled oscillator (VCO) and a tri-state charge pump. A PLL equivalent model and design method to meet SONET jitter requirements are presented. The CDR was tested at 9.529 GB/s in full operation and up to 13.25 Gb/s in data recovery mode. Sensitivity is 14 mV/sub pp/ at a bit error rate (BER)=10/sup -9/. The measured recovered clock jitter is less than 1 ps RMS. The IC dissipates 1.5 W with a -5 V power supply. |
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Bibliography: | SourceType-Scholarly Journals-2 ObjectType-Feature-2 ObjectType-Conference Paper-1 content type line 23 SourceType-Conference Papers & Proceedings-1 ObjectType-Article-3 ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 |
ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/4.868047 |