Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- k Gate Dielectrics

• Published in: IEEE electron device letters Vol. 31; no. 3; pp. 189 - 191
• Main Authors: Kanamura, M., Ohki, T., Kikkawa, T., Imanishi, K., Imada, T., Yamada, A., Hara, N.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.2010; Institute of Electrical and Electronics Engineers
• Subjects: ALD; Aluminum gallium nitride; Applied sciences; Base stations; Devices; Dielectric devices; Dielectric substrates; Dielectrics; Drains; Electronics; enhancement mode; Exact sciences and technology; Gallium nitride; Gallium nitrides; GaN; Gates; HEMTs; Management information systems; MIS high-electron-mobility transistor (MIS-HEMT); MODFETs; MOSFET circuits; Piezoelectric effect; Semiconductor devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surface morphology; Transistors; Voltage threshold; High strength current; High performance; Atomic layer method; Multiple layer; Coatings; Enhancement mode; High electron mobility transistor; MIS transistor; GaN; Drain current; ALD; High k dielectric; MIS high-electron-mobility transistor (MIS-HEMT); MIS devices
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2009.2039026

This letter presents details of high-performance enhancement-mode GaN MIS high-electron-mobility transistor (MIS-HEMT) devices. Devices with an n-GaN/i-AlN/n-GaN triple cap layer, a recessed-gate structure, and high- k gate dielectrics show high drain current and complete enhancement-mode operation. The maximum drain current and threshold voltage ( V th ) are 800 mA/mm and +3 V, respectively. These results indicate that a recessed AlGaN/GaN MIS-HEMT with the triple cap could be a promising new technology for future device applications.