Reduction in the Number of Current Sensors of a Semi-Bridgeless PFC Rectifier Based on GaNFET Characteristics

• Published in: Processes Vol. 11; no. 12; p. 3259
• Main Authors: Yu, Chen-Bin, Hwu, Kuo-Ing
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 01.12.2023
• Subjects: Circuits; Conduction; Diodes; Electric potential; Electromagnetic interference; Electromagnetism; Energy; Field effect transistors; Gallium; Gallium nitrate; Gallium nitrides; Inductors; Metal oxide semiconductor field effect transistors; Metal oxide semiconductors; MOSFETs; Power factor; Power supply; Rectifiers; Semiconductor devices; Sensors; Transistors; Voltage
• ISSN: 2227-9717; 2227-9717
• DOI: 10.3390/pr11123259

The semi-bridgeless power factor correction (PFC) rectifier is widely used due to its high power factor, high efficiency, and low electromagnetic interference. However, in this rectifier, the inductor current will flow through the body diode of the metal–oxide–semiconductor field-effect transistor (MOSFET) when the MOSFET does not work, causing a problem in detecting the inductor current. Consequently, the current transformers are generally used as current sensors. This means that using many current sensors will make the cost and the peripheral detection circuit complicated. In this paper, our new method is to use a gallium nitride field-effect transistor (GaNFET) to replace the metal–oxide–semiconductor field-effect transistor (MOSFET) in the main switch selection. The reverse-biased conduction voltage of the third quadrant of the GaNFET is higher than the forward-biased conduction voltage of the diode, which solves the problem in detecting the inductor current, reduces the number of current sensors, and simplifies the corresponding peripheral circuits and components. Eventually, via mathematical deduction and hardware implementation, a semi-bridgeless PFC prototype with a GaNFET was built to verify the effectiveness of the proposed structure.