Growth and scintillation properties of Eu and Ce doped LiSrI3 single crystals

• Published in: Journal of materials science. Materials in electronics Vol. 28; no. 17; pp. 13157 - 13160
• Main Authors: Kamada, Kei, Yoshino, Masao, Murakami, Rikito, Chiba, Hiroyuki, Yamaji, Akihiro, Shoji, Yasuhiro, Kurosawa, Shunsuke, Yokota, Yuui, Ohashi, Yuji, Kochurikhin, Vladimir V., Yoshikawa, Akira
• Format: Journal Article
• Language: English
• Published: New York Springer US 01.09.2017; Springer Nature B.V
• Subjects: Alpha rays; Bridgman method; Characterization and Evaluation of Materials; Chemistry and Materials Science; Crystal growth; Emission; Energy resolution; Gamma rays; Materials Science; Optical and Electronic Materials; Quartz; Scintillation; Single crystals
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-017-7150-9

In this study, Eu and Ce doped LiSrI 3 single crystals were explored and the scintillation performance was reported at the first time. Eu and Ce doped LiSrI 3 single crystals were grown by the Bridgman–Stockbarger method in a quartz ampoule with 3 mm inner diameter. Growth rate was 0.06 mm/min. Circular samples with 1 mm thickness were obtained from the grown crystal. The grown Eu doped LiSrI 3 crystal demonstrated Eu 2+ 4f–5d emission peak at 420 nm under alpha-ray excitation. In the case of Ce doped one, double emission peaks at 360 and 400 nm were observed. The light yield of the Eu doped LiSrI 3 was around 35,000 photon/MeV for 662 keV gamma-ray and 24,000 photon/5.5 MeV for alpha-ray. Energy resolution of the Eu doped LiSrI 3 was 5.2%@662 keV. Scintillation decay time of the grown Ce and Eu doped LiSrI 3 under 662 keV gamma-ray was 23.8 ns (50%) 212 ns (50%) and 545 ns 100%, respectively.