400 dpi integrated contact type linear image sensors with poly-Si TFT's analog readout circuits and dynamic shift registers

• Published in: IEEE transactions on electron devices Vol. 38; no. 5; pp. 1086 - 1093
• Main Authors: Kaneko, T., Hosokawa, Y., Tadauchi, M., Kita, Y., Andoh, H.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.05.1991; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Circuits; Electronics; Exact sciences and technology; Frequency; Glass; Image sensors; Image storage; Imaging devices; Impedance; Lighting; Linearity; Photodiodes; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Thin film transistors; Characterization; Layout; Dark current; Photodiode; Image sensor; Experimental study; Scanning device
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.78383

Four-hundred-dots-per-inch (dpi) sensors, including poly-Si thin-film-transistor (TFT) scanning circuits, and a-Si photodiodes fabricated on borosilicate glass have been developed. This contact-type image sensor contains TFT analog buffer amplifiers in the readout circuits. The scanning circuits can operate in a frequency range between 200 kHz and 1 MHz. The readout circuits incorporating TFT analog impedance converters decrease photodiode impedance by more than three orders of magnitude and improve the linearity between illumination intensity and the sensor output. High-resolution reading is achieved by the new contact-type linear image sensors with a storage time of 2 ms/line.< >