Study of interface trap properties in MOSFETs using split-current measurements

A novel experimental method for interface trap characterization in MOSFETs is proposed. The method is based on a detailed time domain analysis of the substrate and source/drain currents, called split-currents, and includes the nonsteady state behaviour of the electron and hole emission processes fro...

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Bibliographic Details
Published inSolid-state electronics Vol. 34; no. 2; pp. 173 - 180
Main Authors El-Sayed, Mohamed, Haddara, Hisham
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.02.1991
Elsevier Science
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Field effect transistor
Charge carrier trapping
Interface electron state
Short channel
Silicon
MOS transistor
N channel
Experimental study
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Summary:A novel experimental method for interface trap characterization in MOSFETs is proposed. The method is based on a detailed time domain analysis of the substrate and source/drain currents, called split-currents, and includes the nonsteady state behaviour of the electron and hole emission processes from the interface traps when large triangular signals are applied to the gate. The interface trap density profiles as well as their capture cross sections in a relatively wide region of the silicon band gap are determined and compared to those obtained from the conductance technique adapted recently to be applied on relatively short channel MOSFETs.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(91)90085-D