A simple model of the trap-assisted recombination with the excitonic Auger mechanism

We present a simple model of the trap-assisted recombination combined with the excitonic Auger mechanism. It has been shown that only six independent transitions of electrons and holes should be taken into account to describe a combination of the Shockley–Read–Hall (SRH) recombination with this exci...

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Bibliographic Details
Published inEuropean physical journal plus Vol. 135; no. 1; p. 37
Main Author Szmytkowski, Jȩdrzej
Format Journal Article
LanguageEnglish
Published Berlin/Heidelberg Springer Berlin Heidelberg 01.01.2020
Springer Nature B.V
Subjects
Applied and Technical Physics
Atomic
Auger effect
Augers
Complex Systems
Condensed Matter Physics
Electrons
Mathematical and Computational Physics
Molecular
Optical and Plasma Physics
Optoelectronic devices
Photovoltaics
Physics
Physics and Astronomy
Regular Article
Semiconductors
Theoretical
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Summary:We present a simple model of the trap-assisted recombination combined with the excitonic Auger mechanism. It has been shown that only six independent transitions of electrons and holes should be taken into account to describe a combination of the Shockley–Read–Hall (SRH) recombination with this excitonic process. This is in opposition to a well-known model of the SRH mechanism with the free carriers Auger effect via deep states, where eight separated transitions take place. The derived equation for the effective recombination rate can be useful for modeling the excitonic processes in semiconductors, especially in photovoltaic and optoelectronic devices.
ISSN:2190-5444
2190-5444
DOI:10.1140/epjp/s13360-019-00058-3