Projectile’s mass-dependent nanopatterning of Si (100) for different incidence angles

• Published in: Materials letters Vol. 309; p. 131348
• Main Authors: Vandana, Chhokkar, Preeti, Kumar, Sushil, Singh, Vinamrita, Pandey, Ratnesh K, Kumar, Tanuj, Kumar, Shyam
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.02.2022; Elsevier BV
• Subjects: Argon ions; Bradley-Harper (BH) model; Comparative studies; Hydrodynamic model; Implantation; Incidence angle; Ion beam; Ion beams; Materials science; Optoelectronics; Projectiles; Ripple patterns; Ripples; RMS roughness; Solid surfaces; Sputtering yield; Ion beam; RMS roughness; Hydrodynamic model; Ripple patterns; Bradley-Harper (BH) model; Sputtering yield
• ISSN: 0167-577X; 1873-4979
• DOI: 10.1016/j.matlet.2021.131348

•Growth of ripple patterns on Si (100) for two projectile masses of Ar+ and Kr+.•Higher sputtering yield for Kr+ ions favours higher amplitude of ripples.•Higher penetration range of Ar+ favours the longer wavelength of ripples.•Ripples growth are controlled by ion beam sputtering and solid flow. Control over the dimensions of nanoscale patterns on macroscopic areas of solid surfaces by varying ion beam parameters has been useful in electronic, optic and optoelectronic applications. This work presents a comparative study on projectile’s (Ar and Kr) mass-dependent growth of ripples as a function of the incidence angle. Oblique implantation produces ripples between 50°-70° with highest ordering at ∼ 60°. Heavy mass implantation (Kr+) produces higher amplitude of ripples with shorter wavelength as compared to lighter Ar+ ion, and vice versa. Compositional study shows that the broader near surface damage for Ar+ under higher penetration range produces longer ripple wavelength as compared to Kr+.