Multi-crystalline silicon as active medium for terahertz intracenter lasers

Stimulated emission at terahertz frequencies has been obtained from multi-crystalline silicon doped by phosphor under optical excitation by a mid-infrared laser. The silicon samples consist of grains with a characteristic size distribution in the range from 50 to 500 μm. The maximum operation temper...

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Bibliographic Details
Published inPhysica. B, Condensed matter Vol. 403; no. 4; pp. 535 - 538
Main Authors Pavlov, S.G., Hübers, H.-W., Abrosimov, N.V., Riemann, H., Gavrilenko, L.V., Antonov, A.V.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.03.2008
Subjects
Multi-crystalline silicon
Silicon laser
Terahertz
42.55.Rz
Terahertz
Multi-crystalline silicon
61.72.Mm
Silicon laser
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Summary:Stimulated emission at terahertz frequencies has been obtained from multi-crystalline silicon doped by phosphor under optical excitation by a mid-infrared laser. The silicon samples consist of grains with a characteristic size distribution in the range from 50 to 500 μm. The maximum operation temperature of the laser made from multi-crystalline silicon is 6 K less than that of monocrystalline lasers and the maximum output power is three times less while its laser threshold is only slightly higher and the emission frequency is the same. These effects are attributed to internal strain and enhanced phonon scattering induced by grain boundaries.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2007.08.221