Effect of Indentation on I-V Characteristics of Au/n-GaAs Schottky Barrier Diodes

Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φ ) and ideality factor ( ) was studied by current-voltage ( ) measurements. The method used for indentation was the Vickers microhardness test at ro...

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Bibliographic Details
Published inZeitschrift für Naturforschung. A, A journal of physical sciences Vol. 63; no. 3; pp. 199 - 202
Main Authors Ozdemir, Ahmet Faruk, Calik, Adnan, Cankaya, Guven, Sahin, Osman, Ucar, Nazim
Format Journal Article
LanguageEnglish
Published Verlag der Zeitschrift für Naturforschung 01.04.2008
Subjects
Barrier Height
Fermi Level Pinning
Ideality Factor
Indentation
Schottky Barrier Diode
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Summary:Au/n-GaAs Schottky barrier diodes (SBDs) have been fabricated. The effect of indentation on Schottky diode parameters such as Schottky barrier height (φ ) and ideality factor ( ) was studied by current-voltage ( ) measurements. The method used for indentation was the Vickers microhardness test at room temperature. The experimental results showed that the characteristics move to lower currents due to an increase of φ with increasing indentation weight, while contacts showed a nonideal diode behaviour.
ISSN:0932-0784
1865-7109
DOI:10.1515/zna-2008-3-414