Polybenzoxazine/organosilicon composites with low dielectric constant and dielectric loss

• Published in: Chinese journal of chemical engineering Vol. 64; no. 12; pp. 241 - 249
• Main Authors: Yuan, Manlin, Lu, Xin, Ma, Xiaoyun, Lin, Hao, Lu, Angui, Shao, Liyan, Xin, Zhong
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.12.2023; State Key Laboratory of Chemical Engineering,School of Chemical Engineering,East China University of Science and Technology,Shanghai 200237,China
• Subjects: Composite; Dielectric constant; Organosilicon; Polybenzoxazine; Organosilicon; Dielectric constant; Composite; Polybenzoxazine
• ISSN: 1004-9541; 2210-321X
• DOI: 10.1016/j.cjche.2023.06.024

[Display omitted] The evolution of electronic communication technology raises higher requirements for low dielectric constant (low-k) materials. For this, a benzoxazine functional organosilicon (HP-aptes) with dense Si—O—Si crosslinking networks and large sterically hindered tert-butyl groups was prepared by the sol-gel method. Then, a series of polybenzoxazine composites (PPHP) were prepared from intrinsically low dielectric constant bis-functional benzoxazine monomer (P-aptmds) and HP-aptes. The double crosslinking networks of polybenzoxazine and organosilicon further increased the crosslinking density and decreased the dipole density of composites, which endowed the composites with enhanced low-k properties. When the content of HP-aptes is 30% (mass), the crosslinking density was 2.05×10−3 mol·cm−3, while that of PP-aptmds was 3.31×10−3 mol·cm−3. In addition, the dielectric constant and dielectric loss of PPHP composite at 1 MHz could reach 2.61 and 0.0056, respectively.