Indirect excitons in coupled quantum well structures

• Published in: Surface science Vol. 263; no. 1; pp. 496 - 501
• Main Authors: Zrenner, A., Leeb, P., Schäfer, J., Böhm, G., Weimann, G., Worlock, J.M., Florez, L.T., Harbison, J.P.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 19.02.1992; Amsterdam Elsevier Science; New York, NY
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Physics; Surface and interface electron states
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/0039-6028(92)90396-N

Two different types of indirect two-dimensional exciton systems, a real-space indirect coupled quantum well and u new type of real- and k-space indirect GaAs/AlAs quantum structure, are studied hy steady state and time resoved optical spectroscopy. No clear evidence for exciton condensation is found. In the new structure dramatic narrowing of the exciton linewidth in the indirect regime is found and shown to originate from intrinsic confinement effects. A nonmonotonic behavior of the intensity of the indirect photoluminescence as a function of Γ-X separation is tentativily attributed to zone-edge phonon emission.