Charge trapping and detrapping phenomena in thin oxide-nitride-oxide stacked films

A reversible electron trapping phenomenon in thin oxide/nitride/oxide (ONO) films with respect to stress current and field near the tunneling region is demonstrated for the first time. Trapped electrons can be detrapped by applying a low field or low current stressing under negative gate bias. A ver...

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Bibliographic Details
Published inSolid-state electronics Vol. 31; no. 10; pp. 1501 - 1503
Main Authors Lee, S.K., Chen, J.H., Ku, Y.H., Kwong, D.L., Nguyen, B.Y., Teng, K.W.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.10.1988
Elsevier Science
Subjects
Charge carriers: generation, recombination, lifetime, and trapping
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Conductivity phenomena in semiconductors and insulators
Electronic transport in condensed matter
Exact sciences and technology
Physics
Voltage current curve
Tunnel effect
Multiple layer
Low field
Experimental study
Inorganic compound
Thin film
Charge carrier trapping
Electric field
Flat band voltage
Preparation
Silicon Nitrides
Silicon Oxides
Reversibility
Voltage capacity curve
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Summary:A reversible electron trapping phenomenon in thin oxide/nitride/oxide (ONO) films with respect to stress current and field near the tunneling region is demonstrated for the first time. Trapped electrons can be detrapped by applying a low field or low current stressing under negative gate bias. A very effective electron detrapping process in the thin nitride layer is proposed to explain these unusual trapping behaviors of thin ONO films. The effects of processing chemistry of silicon nitride deposition on the electrical characteristics of thin ONO capacitors and their stability are also discussed.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(88)90022-6