Organic thin-film transistors with reduced photosensitivity

• Published in: Organic electronics Vol. 8; no. 6; pp. 767 - 772
• Main Authors: Chuang, Chiao-Shun, Chen, Fang-Chung, Shieh, Han-Ping D.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.12.2007; Elsevier
• Subjects: Applied sciences; Dielectrics; Electronics; Exact sciences and technology; Nanoparticle; Organic; Photosensitivity; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Thin-film transistors; Transistors; Photosensitivity; 85.30.Tv; Thin-film transistors; 82.35.Np; Nanoparticle; Organic; Dielectrics; Voltage threshold; Atomic force microscopy; Pentacene; X ray diffraction; Recombination center; Organic; Photosensitivity; Nanoparticle; Dielectrics; Thin-film transistors; 82.35.Np; 85.30.Tv; Thin film transistor; Titanium oxide; Photoelectric current; Organic insulators; Recombination process; Organic electronics
• ISSN: 1566-1199; 1878-5530
• DOI: 10.1016/j.orgel.2007.06.012

Organic thin-film transistors with a minimal threshold voltage shift and a more stable photocurrent under illuminated conditions can be made by embedding titanium dioxide (TiO 2) nanoparticles into a polymer dielectric layer. While the studies of pentacene morphology using atomic force microscopy and X-ray diffraction have shown similar results before and after embedding the TiO 2 into the dielectric layer, it has been found that the presence of TiO 2 nanoparticles is essential. The reduced photosensitivity can be attributed to the recombination centers induced by the TiO 2 nanopartilces and this can enhance substantially the recombination process of the electrons trapped in the channel.