A novel low temperature integration of hybrid CMOS devices on flexible substrates
In this work we demonstrate a novel integration approach to fabricate CMOS circuits on plastic substrates (poly-ethylene naphthalate, PEN). We use pentacene and amorphous silicon (a-Si:H) thin-film transistors (TFTs) as p-channel and n-channel devices, respectively. The maximum processing temperatur...
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Published in | Organic electronics Vol. 10; no. 7; pp. 1217 - 1222 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
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Amsterdam
Elsevier B.V
01.11.2009
Elsevier |
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Abstract | In this work we demonstrate a novel integration approach to fabricate CMOS circuits on plastic substrates (poly-ethylene naphthalate, PEN). We use pentacene and amorphous silicon (a-Si:H) thin-film transistors (TFTs) as p-channel and n-channel devices, respectively. The maximum processing temperature for n-channel TFTs is 180
°C and 120
°C for the p-channel TFTs. CMOS circuits demonstrated in this work include inverters, NAND, and NOR gates. Carrier mobilities for nMOS and pMOS after the CMOS integration process flow are 0.75 and 0.05 cm
2/V
s, respectively. Threshold voltages (
V
t) are 1.14
V for nMOS and −1.89
V for pMOS. The voltage transfer curve of the CMOS inverter showed a gain of 16. Correct logic operation of integrated flexible NAND and NOR CMOS gates is also demonstrated. In addition, we show that the pMOS gate dielectric is likely failing after electrical stress. |
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AbstractList | In this work we demonstrate a novel integration approach to fabricate CMOS circuits on plastic substrates (poly-ethylene naphthalate, PEN). We use pentacene and amorphous silicon (a-Si:H) thin-film transistors (TFTs) as p-channel and n-channel devices, respectively. The maximum processing temperature for n-channel TFTs is 180
°C and 120
°C for the p-channel TFTs. CMOS circuits demonstrated in this work include inverters, NAND, and NOR gates. Carrier mobilities for nMOS and pMOS after the CMOS integration process flow are 0.75 and 0.05 cm
2/V
s, respectively. Threshold voltages (
V
t) are 1.14
V for nMOS and −1.89
V for pMOS. The voltage transfer curve of the CMOS inverter showed a gain of 16. Correct logic operation of integrated flexible NAND and NOR CMOS gates is also demonstrated. In addition, we show that the pMOS gate dielectric is likely failing after electrical stress. |
Author | Kaftanoglu, K. Allee, D.R. Gnade, B.E. Alshareef, H.N. Venugopal, S. Quevedo-Lopez, M.A. Gowrisanker, S. Krishna, R. |
Author_xml | – sequence: 1 givenname: S. surname: Gowrisanker fullname: Gowrisanker, S. organization: Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, United States – sequence: 2 givenname: M.A. surname: Quevedo-Lopez fullname: Quevedo-Lopez, M.A. email: mquevedo@utdallas.edu organization: Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, United States – sequence: 3 givenname: H.N. surname: Alshareef fullname: Alshareef, H.N. organization: Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, United States – sequence: 4 givenname: B.E. surname: Gnade fullname: Gnade, B.E. organization: Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, United States – sequence: 5 givenname: S. surname: Venugopal fullname: Venugopal, S. organization: Flexible Display Center, Arizona State University, Tempe, AZ 85284, United States – sequence: 6 givenname: R. surname: Krishna fullname: Krishna, R. organization: Flexible Display Center, Arizona State University, Tempe, AZ 85284, United States – sequence: 7 givenname: K. surname: Kaftanoglu fullname: Kaftanoglu, K. organization: Flexible Display Center, Arizona State University, Tempe, AZ 85284, United States – sequence: 8 givenname: D.R. surname: Allee fullname: Allee, D.R. organization: Flexible Display Center, Arizona State University, Tempe, AZ 85284, United States |
BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=21990911$$DView record in Pascal Francis |
BookMark | eNp9kE1LAzEQhoNUsFZ_gZdcPO6aSfbz4KEUv6BSRD2HbHZSU7abkmyr_femVjx6moF5nxnmOSej3vVIyBWwFBgUN6vU-SV2KWesTlmRMuAnZAxVWSV5Ltgo9nlRJAB1fUbOQ1ixSGXAx-RlSnu3w4527pMOuN6gV8PWI7X9gMvYW9dTZ-jHvvG2pbPnxSttcWc1BhonpsMv23RIw7YJQ4xjuCCnRnUBL3_rhLzf373NHpP54uFpNp0nWggxJKbMFRiVZw00pSpVzlnGCswNq9pSiSoryhJrrjPdNBogw8ooyLRpFQqOvBYTIo57tXcheDRy4-1a-b0EJg9W5Er-WJEHK5IVMlqJ1PWR2qigVWe86rUNfyiPhlgNEHO3xxzGF3YWvQzaYq-xtR71IFtn_73zDTeofA4 |
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ContentType | Journal Article |
Copyright | 2009 2009 INIST-CNRS |
Copyright_xml | – notice: 2009 – notice: 2009 INIST-CNRS |
DBID | IQODW AAYXX CITATION |
DOI | 10.1016/j.orgel.2009.06.012 |
DatabaseName | Pascal-Francis CrossRef |
DatabaseTitle | CrossRef |
DatabaseTitleList | |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Chemistry Applied Sciences |
EISSN | 1878-5530 |
EndPage | 1222 |
ExternalDocumentID | 10_1016_j_orgel_2009_06_012 21990911 S1566119909001827 |
GroupedDBID | --K --M .~1 0R~ 123 1B1 1RT 1~. 1~5 29N 4.4 457 4G. 5VS 7-5 71M 8P~ AABXZ AACTN AAEDT AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAQXK AARLI AAXUO ABFNM ABFRF ABJNI ABMAC ABNEU ABXDB ABXRA ABYKQ ACDAQ ACFVG ACGFO ACGFS ACNNM ACRLP ADBBV ADECG ADEZE ADMUD AEBSH AEFWE AEKER AENEX AEZYN AFKWA AFRZQ AFTJW AFZHZ AGHFR AGUBO AGYEJ AIEXJ AIKHN AITUG AIVDX AJBFU AJOXV AJSZI ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ ASPBG AVWKF AXJTR AZFZN BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EJD EO8 EO9 EP2 EP3 FDB FEDTE FGOYB FIRID FLBIZ FNPLU FYGXN G-Q GBLVA HVGLF HZ~ IHE J1W KOM KZ1 M41 MAGPM MO0 N9A O-L O9- OAUVE OGIMB OZT P-8 P-9 P2P PC. Q38 R2- RIG ROL RPZ SCB SCC SDF SDG SES SEW SPC SPCBC SPD SSK SSM SSQ SSZ T5K UNMZH XFK XPP ZMT ~G- AAPBV ABPIF ABPTK IQODW AAXKI AAYXX AFJKZ AKRWK CITATION |
ID | FETCH-LOGICAL-c333t-f75a1fa54b1b7a7a520406e5f08d7a384677e92c4cbbc114e8fa14cfdae32e293 |
IEDL.DBID | AIKHN |
ISSN | 1566-1199 |
IngestDate | Thu Sep 26 21:21:43 EDT 2024 Sun Oct 22 16:04:11 EDT 2023 Fri Feb 23 02:32:33 EST 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 7 |
Keywords | 84.30.−r 85.30.Tv NOR gate Hybrid CMOS 85.40.−e 73.61.Jc NAND gate Flexible electronics 72.80.Le 81.05.Gc Voltage threshold Amorphous material Electric stress Charge carrier mobility 85.40.-e n channel 84.30.-r Logic circuit Complementary MOS technology Silicon CMOS integrated circuits Inverter Pentacene NAND circuit PMOS technology NOR circuit p channel Flexible structure Amorphous hydrogenated material Thin film transistor Plastics NMOS technology Gain |
Language | English |
License | CC BY 4.0 |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c333t-f75a1fa54b1b7a7a520406e5f08d7a384677e92c4cbbc114e8fa14cfdae32e293 |
PageCount | 6 |
ParticipantIDs | crossref_primary_10_1016_j_orgel_2009_06_012 pascalfrancis_primary_21990911 elsevier_sciencedirect_doi_10_1016_j_orgel_2009_06_012 |
PublicationCentury | 2000 |
PublicationDate | 2009-11-01 |
PublicationDateYYYYMMDD | 2009-11-01 |
PublicationDate_xml | – month: 11 year: 2009 text: 2009-11-01 day: 01 |
PublicationDecade | 2000 |
PublicationPlace | Amsterdam |
PublicationPlace_xml | – name: Amsterdam |
PublicationTitle | Organic electronics |
PublicationYear | 2009 |
Publisher | Elsevier B.V Elsevier |
Publisher_xml | – name: Elsevier B.V – name: Elsevier |
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SSID | ssj0016412 |
Score | 2.112685 |
Snippet | In this work we demonstrate a novel integration approach to fabricate CMOS circuits on plastic substrates (poly-ethylene naphthalate, PEN). We use pentacene... |
SourceID | crossref pascalfrancis elsevier |
SourceType | Aggregation Database Index Database Publisher |
StartPage | 1217 |
SubjectTerms | Applied sciences Circuit properties Design. Technologies. Operation analysis. Testing Digital circuits Electric, optical and optoelectronic circuits Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Flexible electronics Hybrid CMOS Integrated circuits NAND gate NOR gate Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
Title | A novel low temperature integration of hybrid CMOS devices on flexible substrates |
URI | https://dx.doi.org/10.1016/j.orgel.2009.06.012 |
Volume | 10 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LT8JAEJ4gHNQYo6gRH2QPHi2wfWzbI2kkKAGjSOTW7La7EdO0RFDjxd_ubrslcNCDp03abtvMbL-d6cx8A3AVUdaxmMps9WNm2FjFd4ljGS6lHY9TOVBVOzwckf7Evps60woEZS2MSqvU2F9geo7W-khbS7M9n83aY-V5YCzR1Fed5Ux3C2pyO7LtKtS6t4P-aBVMIHYR9JTXG2pCST6Up3mpH8-J5q0krQ42f9ug9uZ0IcUmin4Xa5tQ7wD2tfWIusULHkKFp3XYDsqmbXXYXeMXPIKHLkqzD56gJPtEioRKMyijkiRCKgVlAr18qbotFAzvxyjmOXYgeUYoskyWcLSQ6JKz2C6OYdK7eQr6hu6hYESWZS0N4ToUC-rYDDNXit4x5VdLuCM6XuxSS1kfLvfNyI4Yi6RvxD1BsR2JmHLL5NIWOIFqmqX8FFDkE8YUAV5sCel1MsZdFlNpkVAWx8SjDbguBRfOC6qMsMwhew1zOauml36oMumw2QBSCjfc0Hgowfzvic0NVaweZuaLAeOz_975HHbyYFFeangB1eXbO7-UNseSNWGr9Y2bemWpcfD4PPgBk6XZUw |
link.rule.ids | 315,786,790,4521,24144,27955,27956,45618,45712 |
linkProvider | Elsevier |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LT8JAEJ4gHtAYo6gRH7gHjxbYPumRNBJUwBgg4dbstrsRQ1oiqPHib3dn2xo46MFTk3b7yOz225ndb74BuI4Yb1kcma1-zA2b4v6u61iGx1irLZg6MMwdHgzd3sS-nzrTEgRFLgzSKnPszzBdo3V-pplbs7mYzZojjDwoVWjqY2U509uCbfQGkNfV-PrheahwINvyVK0NbF5ID2mSFy47z3PVSrfRouZv09Pegi2V0WRW7WJtCuoewH7uO5JO9nmHUBJJFSpBUbKtCrtr6oJH8NQhSfou5mSefhCUoMr1k0khEaG6hKSSPH9i1hYJBo8jEguNHERdkSiVyeeCLBW2aA3b5TFMurfjoGfkFRSMyLKslSE9h1HJHJtT7inDO6b6Z13hyFY79piFvocnfDOyI84jFRmJtmTUjmTMhGUK5QmcQDlJE3EKJPJdzlH-Lrakijk5Fx6PmfJHGI9jt81qcFMYLlxkQhlhwSB7CbWdseSlHyKPjpo1cAvjhhv9HSoo__vG-kZX_LzM1EOB0rP_PvkKKr3xoB_274YP57Cjt4100uEFlFevb-JSeR8rXtej6xu57NiF |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=A+novel+low+temperature+integration+of+hybrid+CMOS+devices+on+flexible+substrates&rft.jtitle=Organic+electronics&rft.au=Gowrisanker%2C+S.&rft.au=Quevedo-Lopez%2C+M.A.&rft.au=Alshareef%2C+H.N.&rft.au=Gnade%2C+B.E.&rft.date=2009-11-01&rft.pub=Elsevier+B.V&rft.issn=1566-1199&rft.eissn=1878-5530&rft.volume=10&rft.issue=7&rft.spage=1217&rft.epage=1222&rft_id=info:doi/10.1016%2Fj.orgel.2009.06.012&rft.externalDocID=S1566119909001827 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1566-1199&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1566-1199&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1566-1199&client=summon |