Spatial electric field effect in a GaAs/AlAs tetragonal quantum dot

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 40; no. 3; pp. 627 - 632
• Main Authors: Akbas, H., Dane, C., Kasapoğlu, K., Talip, N.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 2008; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electric flux; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Physics; Polarization; Quantum dots; Spatial electric field; Sub-band energy; Tetragonal dot; Polarization; Electric flux; 71.55.Eq; 73.20.Dx; Spatial electric field; 71.55.−i; Sub-band energy; Tetragonal dot; Aluminium arsenides; Band structure; Sub-band energy; Polarization; Tetragonal dot; Spatial electric field; Electric flux; Gallium arsenides; 73.20.Dx; 71.55.-i; 71.55.Eq; Variational methods; Quantum dots; Electric field effects; Subband; Effective mass model
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2007.08.133

Within the effective-mass approximation and with two-parameter variational procedure we have calculated the effect of spatial electric field and ratios of dot edge lengths( c/ a) on the electron sub-band energy and the polarization of an electron in the tetragonal GaAs/AlAs quantum dot. It is found that the electric flux Φ leaving the tetragonal dot is reliable parameter for describing the structure.