A Dual-Pass High Current Density Resonant Tunneling Diode for Terahertz Wave Applications

We report on a dual-pass high current density resonant tunneling diode (RTD) for terahertz wave applications. This technique reduces the overall fabrication complexity and improves the reproducibility for creating low resistance ohmic contacts. With our dual-pass technique, we demonstrate accurate c...

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Bibliographic Details
Published inIEEE electron device letters Vol. 36; no. 12; pp. 1295 - 1298
Main Authors Jacobs, K. J. P., Stevens, B. J., Wada, O., Mukai, T., Ohnishi, D., Hogg, R. A.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2015
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Current density
Fabrication
Manufacturability
Resonant tunneling devices
Resonant Tunnelling Diode
Schottky barriers
Terahertz
Terahertz radiation
Voltage measurement
terahertz
manufacturability
Resonant tunnelling diode
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Summary:We report on a dual-pass high current density resonant tunneling diode (RTD) for terahertz wave applications. This technique reduces the overall fabrication complexity and improves the reproducibility for creating low resistance ohmic contacts. With our dual-pass technique, we demonstrate accurate control over the final device area by measuring the RTD current-voltage characteristic during the fabrication process and guiding the emitter current through the full RTD structure with a second contact electrode on the collector side. We go on to show how we may extract important information about the RTD performance using this method.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2015.2491339