Luminescence of Er-implanted porous silicon

• Published in: Solid state communications Vol. 96; no. 5; pp. 317 - 320
• Main Authors: Yi, Li, Yong-Dong, Zhou, Ju-Sheng, Li, Hong, Jiang, Yi-Xin, Jin
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 01.11.1995; Elsevier
• Subjects: A. nanostructures; A. semiconductors; Condensed matter: electronic structure, electrical, magnetic, and optical properties; E. luminescence; Exact sciences and technology; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other solid inorganic materials; Photoluminescence; Physics; A. semiconductors; E. luminescence; A. nanostructures; Ion implantation; Electrochemical method; Porous materials; Optical properties; Luminescence; Photoluminescence; Czochralski method; Silicon; Erbium ions; Nanostructures; Experimental study; Electrochemical etching
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/0038-1098(95)00448-3

After Er + ion implantation the bright visible emissions of porous silicon (PSi) still remain. After annealing 1.54μm characteristic emissions of Er 3+ in PSi have been measured, and its intensity is much more intense than that of Si processed by same conditions. Further experiment shows that enhancement of the Er 3+ emission relates to the surface layer of porous silicon. It is probable that the impurities introduced in surface layer by electrochemical process give rise to 1.54μm luminescence enhancement.