Conducting luminescent ZnS films formed by plasma-assisted metal-organic chemical vapour deposition

Polycrystalline ZnS films of micrometre thickness were grown on 50 mm diameter soda-lime glass substrates at 623 K at about 10 3 Pa pressure by epitaxial pyrolysis of diethyl zinc and hydrogen sulphide gas mixtures without premature reaction using a simplified plasma-assisted metal-organic chemical...

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Bibliographic Details
Published inThin solid films Vol. 162; pp. 263 - 271
Main Authors Patel, N.G., Fischer, A.G.
Format Journal Article
LanguageEnglish
Published Lausanne Elsevier B.V 01.08.1988
Elsevier Science
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Summary:Polycrystalline ZnS films of micrometre thickness were grown on 50 mm diameter soda-lime glass substrates at 623 K at about 10 3 Pa pressure by epitaxial pyrolysis of diethyl zinc and hydrogen sulphide gas mixtures without premature reaction using a simplified plasma-assisted metal-organic chemical vapour deposition apparatus employing only a gas ballast forepump and a Tesla spark tester. The reaction rate was strongly increased by a gas discharge. The films became strongly n type on doping with aluminium from added trimethyl aluminium vapour. The blue photoluminescence of the films was impaired by their contamination with chromium (ascertained by electron paramagnetic resonance) from the stainless steel vessel and tubing employed.
ISSN:0040-6090
1879-2731
DOI:10.1016/0040-6090(88)90214-3