Comparative analysis of microwave noise in GaAs and AlGaAs/GaAs channels

Hot electron noise at 10 GHz microwave frequency is investigated in an AlGaAs/GaAs heterostructure channel with two-dimensional electron gas (2DEG), and the results are compared to those for 3DEG channels of GaAs. An experimental evidence of noise due to 2DEG⇆3DEG transfer at 80 K is presented. The...

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Bibliographic Details
Published inSolid-state electronics Vol. 36; no. 9; pp. 1339 - 1343
Main Authors Aninkevičius, V., Bareikis, V., Liberis, J., Matulionis, A., Sakalas, P.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.09.1993
Elsevier Science
Subjects
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Transport process
High electron mobility transistor
Semiconductor device
Noise
Noise reduction
Hot electron
Comparative study
Electron gas
Heterojunction
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Summary:Hot electron noise at 10 GHz microwave frequency is investigated in an AlGaAs/GaAs heterostructure channel with two-dimensional electron gas (2DEG), and the results are compared to those for 3DEG channels of GaAs. An experimental evidence of noise due to 2DEG⇆3DEG transfer at 80 K is presented. The related longitudinal diffusion of hot electrons in long 2DEG channels is found to dominate at the intermediate fields which are well below the threshold field for intervalley diffusion in GaAs. A tendency to suppress the intervalley noise and diffusionby the 2DEG⇆DEG transfer is observed at the high fields. Possible suppression of the dominant sources of microwave noise in modulation-doped field-effect transistor channels is discussed.
ISSN:0038-1101
1879-2405
DOI:10.1016/0038-1101(93)90174-O