Anisotropy investigations and photoluminescence properties of porous silicon

Porous silicon layers have been investigated using reflectance and photoluminescence techniques at room and liquid nitrogen temperatures. We observe a noticeable anisotropy of porous silicon samples. The measured parallel and normal components of the refractive index for samples with moderate porosi...

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Published inSolid state communications Vol. 91; no. 8; pp. 649 - 653
Main Authors Basmaji, P., Surdutovich, G., Vitlina, R., Kolenda, J., Bagnato, V.S., Mohajeri-Moghaddam, H., Peyghambarian, N.
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.08.1994
Elsevier
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other solid inorganic materials
Photoluminescence
Physics
Silicon
Porosity
Refractive index
Porous materials
Optical properties
Photoluminescence
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Summary:Porous silicon layers have been investigated using reflectance and photoluminescence techniques at room and liquid nitrogen temperatures. We observe a noticeable anisotropy of porous silicon samples. The measured parallel and normal components of the refractive index for samples with moderate porosity were 1.25 and 1.30, respectively. Possible mechanisms for the origin of the photoluminescence are discussed.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(94)90565-7