Studies of generation of ultrafine semiconductor particles in polydiacetylene Langmuir-Blodgett films accompanied with colour transition

Ultrafine semiconductor particles of cadmium sulfide were generated through exposing poly-(pentacosa-10, 12-diynoic acid) (PDA) Langmuir-Blodgett (LB) films to hydrogen sulfide gas. With the generation of ultrafine particles, the blue form of PDA multilayers was converted to the red form. UV-visible...

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Bibliographic Details
Published inSolid state communications Vol. 84; no. 4; pp. 449 - 451
Main Authors Zhu, Rong, Wei, Yu, Yuan, Chunwei, Xiao, Shoujun, Lu, Zuhong, Schmitt, Hans J
Format Journal Article
LanguageEnglish
Published Oxford Elsevier Ltd 01.10.1992
Elsevier
Subjects
Chemistry
Colloidal state and disperse state
Exact sciences and technology
General and physical chemistry
Absorption spectrometry
Phase transformation
Semiconductor materials
Visible absorption
Fine particle
Multiple layer
Ultraviolet visible spectrum
Langmuir Blodgett layer
Cadmium Sulfides
Experimental study
Inorganic compound
Ellipsometry
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Summary:Ultrafine semiconductor particles of cadmium sulfide were generated through exposing poly-(pentacosa-10, 12-diynoic acid) (PDA) Langmuir-Blodgett (LB) films to hydrogen sulfide gas. With the generation of ultrafine particles, the blue form of PDA multilayers was converted to the red form. UV-visible absorption spectra and ellipsometric measurements were made to study the generation of ultrafine particles and the colour phase transition of PDA LB films.
ISSN:0038-1098
1879-2766
DOI:10.1016/0038-1098(92)90494-T